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ECE EEE 3300L - Electronics I Laboratory

Curriculum Designation: Required for EE and CpE majors.

Course (Catalog) Description: Laboratory in support for EEL3300, Electronics.

Prerequisites: EEL 3112 and EEL 3112L

Corequisite: EEE 3300

Course Objectives:

  1. Measure diode voltage and current for different input voltages and generate the I-V characteristic of the silicon P-N junction diode.
  2. Measure the ripple voltage and calculate the voltage regulation of a half-wave rectifier, a full-wave rectifier, and a DC voltage doubler circuit.
  3. Draw the I-V characteristics of a zener diode in the reverse bias and estimate the value of the zener knee voltage.
  4. Calculate the voltage regulation for each load resistance in a zener regulating circuit.
  5. Generate the I-V characteristic of a MOSFET and calculate its transconductance.
  6. Generate the I-V characteristic of a BJT and calculate its forward current gain.
  7. Generate the voltage transfer characteristics of BJT and MOSFET inverters.
  8. Determine the bias points of BJT and MOSFET single-stage amplifier circuits.
  9. Calculate the voltage gain, input resistance, and output resistance of BJT common-emitter amplifier and common-source amplifier circuits.
  10. Design, construct, and evaluate a practical electronic circuit by using the knowledge students have gained in their circuit theory and electronic courses.

Topics Covered:

  1. PN-junction diodes
  2. Bipolar junction transistors
  3. Metal oxide semiconductor field effect transistors
  4. Operational amplifiers

Class Schedule: One 165 minute lab per week (1 credit hours).

Contribution to Professional Component: Engineering topic: 1 credit hour

Science/Design (%): 10% / 90%

Relationship to ABET Program Outcomes: B

Prepared by: Bruce A. Harvey

Revised: May 6, 2016