Curriculum Designation: Required for EE and CpE majors.
Course (Catalog) Description: Laboratory in support for EEL3300, Electronics.
Prerequisites: EEL 3112 and EEL 3112L
Corequisite: EEE 3300
- Measure diode voltage and current for different input voltages and generate the I-V characteristic of the silicon P-N junction diode.
- Measure the ripple voltage and calculate the voltage regulation of a half-wave rectifier, a full-wave rectifier, and a DC voltage doubler circuit.
- Draw the I-V characteristics of a zener diode in the reverse bias and estimate the value of the zener knee voltage.
- Calculate the voltage regulation for each load resistance in a zener regulating circuit.
- Generate the I-V characteristic of a MOSFET and calculate its transconductance.
- Generate the I-V characteristic of a BJT and calculate its forward current gain.
- Generate the voltage transfer characteristics of BJT and MOSFET inverters.
- Determine the bias points of BJT and MOSFET single-stage amplifier circuits.
- Calculate the voltage gain, input resistance, and output resistance of BJT common-emitter amplifier and common-source amplifier circuits.
- Design, construct, and evaluate a practical electronic circuit by using the knowledge students have gained in their circuit theory and electronic courses.
- PN-junction diodes
- Bipolar junction transistors
- Metal oxide semiconductor field effect transistors
- Operational amplifiers
Class Schedule: One 165 minute lab per week (1 credit hours).
Contribution to Professional Component: Engineering topic: 1 credit hour
Science/Design (%): 10% / 90%
Relationship to ABET Program Outcomes: B
Prepared by: Bruce A. Harvey
Revised: May 6, 2016