fbpx ECE EEE 3300 - Electronics | FAMU FSU College of Engineering Skip to main content

ECE EEE 3300 - Electronics

Curriculum Designation: Required for electrical engineering and computer engineering majors.

Course (Catalog) Description: Diode models and circuits; DC biasing of bipolar-junction and field-effect transistors; small- and large-signal transistor models; frequency analysis of single-stage AC amplifiers.

Prerequisite: EEL 3112 and MAP 2302

Textbooks/Required Material: Microelectronic Circuits & Devices, Author: Horenstein, Publisher: Pearson Education, Edition: 2nd, Copyright Year: 1996

Course Objectives:

  1. Analyze basic circuits using Ohm's, Kirchhoff's, and superposition laws, as well as Thevenin and Norton equivalent circuits.
  2. Describe the nonlinear I-V characteristics of the p-n junction diode, and solve simple circuits containing two-terminal nonlinear elements.
  3. Classify the electronic circuits made from two-terminal nonlinear elements, including clipping, limiting, and rectification, and analyze and design power-supply circuits.
  4. Describe the I-V characteristics of three-terminal devices including field-effect transistor (FET) and bipolar junction transistor (BJT); and identify the type of device given the I-V characteristics.
  5. Analyze and design basic circuits containing three-terminal devices, determine the relationship between the input and output voltages, and determine the device parameters.
  6. Analyze and design single transistor amplifier circuits, and determine the small-signal gains of the amplifier using the small-signal model.
  7. Identify and determine high and low-frequency capacitor in amplifiers, derive frequency response of basic amplifiers, and design an amplifier to meet frequency response criteria.

Topics Covered:

  1. Review of Circuit Analysis
  2. Basic Semiconductor Theory
  3. Operational Amplifier Circuits
  4. Diodes and Applications
  5. Bipolar Junction Transistor (BJT): DC Analysis and Biasing
  6. BJT Amplifier Circuits: Small-Signal Analysis and Frequency Response
  7. Metal Oxide Semiconductor Field Effect Transistor (MOSFET): DC Analysis and Biasing
  8. MOSFET Amplifier Circuits: Small-Signal Analysis and Frequency Response
  9. BJT and MOSFET Amplifier Circuit Configurations

Class Schedule: Three 50 minute or two 75 minute lectures per week (3 credit hours).

Contribution to Professional Component: Engineering topic: 3 credit hours

Science/Design (%): 80% / 20%

Relationship to ABET Program Outcomes: E and I

Prepared by: Bruce A. Harvey

Revised: may 6, 2016